TF3420 transistor equivalent, n-channel enhancement mode field effect transistor.
VDS (V) = 20V ID = 6 A (VGS = 10V) RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 27mΩ (VGS = 4.5V) RDS(ON) < 42mΩ (VGS = 2.5V) RDS(ON) < 55mΩ (VGS = 1.8V)
TO-236 (SOT-23) Top Vie.
The TF3420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional loa.
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